Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.