ION IMPLANTATION AND LASER ANNEALING OF HIGH T C SUPERCONDUCTING MATERIALS

A study is presented of the effects of ion implantation and pulsed laser processing on the stoichiometry, phase equilibria, texture, microstructure and superconducting critical temperature of Nb-Ge, Nb-N, Nb-C-N, V-Si and Nb-Ir films. Laser induced disorder in Nb 3 Ir, V 3 Si, V 3 Ge and NbN single crystals was also investigated by ion channeling techniques.