MoS 2 /graphene Lateral Heterostructure Field Effect Transistors
2021
Integrated logic circuits require transistors that have a sufficiently high mobility, but also a high current on/off ratio. In this respect, two-dimensional (2D) molybdenum disulfide (MoS 2 ) has been demonstrated as a suitable channel material for n-type field-effect transistors (FETs) with high performance. Single-layer graphene (SLG) has been shown to reduce contact resistance in such MoS 2 devices [2] , [3] . Here, we experimentally demonstrate a scalable method for low resistivity contacts to MoS 2 using only chemical vapor deposited (CVD)-grown SLG, corroborated through simulations that explore the scalability potential of contact resistance optimization based on this approach.
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