The low temperature annealing of p-cadmium telluride in gallium-bath

Abstract The influence of post-growth low-temperature doping with Ga on the PL properties of the p-CdTe bulk crystals have been investigated. It was shown that during annealing in Ga-bath, the atoms of Ga incorporate into p-CdTe as Ga Cd donors. In crystals with Cu Cd and Li Cd as residual acceptors, Ga atoms replace Cu and Li in Cd sites to form two shallow donors, Ga Cd and (Cu, Li) i per one atom of Ga. Comparisons of the Ga-annealing of p-CdTe with the annealing in vacuum, in Cd vapour and in Hg-Te atmosphere have been made.