背入射Au/TiO 2 /Au肖特基结紫外探测器

Rutile phase TiO_2 nanowire arrays were prepared on F:SnO_2 (FTO) substrate via a low temperature hydrothermal method and characterized by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Then back incident ultraviolet photodetectors of Au/TiO_2/Au structure were fabricated by traditional photo-lithography technique and magnetron sputter plating. At 2.0 V bias, a very low dark current of 3.5 nA is achieved due to the back-to-back structure of the device. Under the irradiation of 360 nm UV-light, the photocurrent can reach 704 nA. The maximum responsibility is up to 0. 162 A/W at 360 nm, corresponding to a quantum efficiency of 56.2%.