of the same semiconductor device and process for producing

The invention relates to a semiconductor device having a first layer (33) which is formed of a material of the silicon family, a dielectric layer (37) and an electrode layer (39) and a method for producing the same. DOLLAR A According to the invention on the first layer, z. B. a lower capacitor electrode, or a gate substrate, the dielectric layer produced by sequentially supplying reactants. On the dielectric layer is an electrode layer, such. B. applied an upper capacitor electrode or a gate electrode with a work function which is higher than that of the first layer. DOLLAR A using, for example, to provide capacitors and transistors in semiconductor devices.