Reliable threshold voltage determination for sub-0.1 /spl mu/m gate length MOSFETs

A reliable method to determine the threshold voltage V/sub th/ for MOSFETs with gate length down to sub-0.1 /spl mu/m has been developed. The method determines V/sub th/ by linear extrapolation of the transconductance g/sub m/ to zero and is therefore named "GMLE method". 2D simulations were performed to extract the physical meaning of the method and to prove its reliability for different technologies. The results reveal that determined V/sub th/ values always meet the threshold condition, i.e. the onset of inversion layer build-up.