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Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
2009
Sasago Yoshitaka
Kinoshita Masaharu
Morikawa Takahiro
Kurotsuchi Kenzo
Hanzawa Satoru
Mine Toshiyuki
Shima Akio
Fujisaki Yoshihisa
Kume Hitoshi
Moriya Hiroshi
Takaura Norikatsu
Torii Kazuyoshi
Keywords:
Electrical resistivity and conductivity
Electronic engineering
Phase-change memory
Diode
Materials science
Optoelectronics
cross point
cell size
Optics
Correction
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