Correlation of electronic and structural data for a superlattice tunnel diode

A range of analytical methods (transmission electron microscopy, secondary ion mass spectroscopy, Auger sputter profiling and X-ray diffraction), has been applied to a semiconductor multilayer structure, specifically a superlattice tunnel diode of GaAs/AlxGa1-xAs. The analytical data has been correlated with both the predicted and observed electrical performance. A comparison of the various characterisation methods shows the strengths and weaknesses of each.