High-temperature point defect equilibrium in CdTe modelling

Abstract High-temperature (673–1173 K) electrical property ( σ ,  R H ) measurements in undoped and In-doped (up to 1×10 20  at/cm 3 ) CdTe were performed under different stoichiometric conditions. Cadmium (tellurium) vapor pressure or temperature electron (hole) density dependences were obtained. The results are described by a computed defect structure model, which optimizes the defect reaction constants. A new In incorporation defect reaction is proposed, explaining the dopant self-compensation mechanism.