Metalorganic chemical vapor deposition of PbTe films on GaAs substrates

PbTe films on GaAs substrates were grown by metalorganic chemical vapor deposition for the first time, at substrate temperatures as low as 300 °C. Films grown directly on GaAs below a substrate temperature of 400 °C showed (111) orientation on (100) GaAs and (100) orientation on (111) GaAs. However, above 400 °C on GaAs and on CdTe buffer layers, the films followed the orientation of GaAs and CdTe, respectively. Hall measurements showed n‐type conductivity in PbTe films grown directly on GaAs regardless of the Te/Pb input gas ratio and substrate temperature. The conductivity type of PbTe films grown on CdTe buffer layers depended on the input gas ratio of Te/Pb. The resistivity measured by Hall measurement was higher than that determined from infrared data, suggesting microcracks in the films.