A 1/3" format image sensor with refractory metal light shield for color video applications

The authors report results obtained on a full-color interline transfer CCD (charged-coupled device) image sensor with pixel dimensions of 8.6 mu m(H)*6.8 mu m(V) using 1.2- mu m design rules and a two-phase, single-polysilicon-per-phase technology. In order to reduce image smear and to provide suitable topography for integral color filters, a refractory light shield with a flowed glass overlayer was incorporated. The basic sensor and pixel architecture is shown. Image smear as a percent of full well, measured with 10% vertical illumination at saturated intensity, is shown as a function of wavelength. Smear is lowest at short wavelengths but is at an acceptable level for applications with controlled illumination. >