Printing circuits with 4nm feature size: similarities and differences between EUV and optical lithographies
2015
One of the main concerns about EUV lithography is whether or not it can be extended to very high numerical aperture. Recently, a waveguide effect in high-NA EUV lithography was observed. This effect serves to overcome the problem of shadowing in EUV lithography and allows EUV lithography to be extended to the 4-nm node. In this paper, an exact eigenmode analysis is presented to explain the observed effect. This waveguide effect is then applied to simulate the printing of 4-nm lines and spaces with excellent aerial-image contrast and peak intensity. The feasibility of EUV lithography for printing logic circuits containing general 2D patterns with 4-nm feature size is also demonstrated.
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