Structural and PL properties of Cu-doped ZnO films

Abstract Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at ∼380 nm and a blue band centered at ∼430 nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn i ) and Zn vacancy (V Zn ) level transition. A strong blue peak (∼435 nm) was observed in the PL spectra when the α Cu (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c -axis preferred orientation and smaller lattice mismatch. The influence of α Cu and the sputtering power on the blue band was investigated.