Defect formation in electron-irradiated synthetic diamond annealed in the temperature range 820-1120 K

Abstract The phenomenon of the extreme increase of the concentration of dispersed paramagnetic nitrogen in electron-irradiated synthetic diamond specimens annealed in the temperature range 820–1120 K was revealed. It is established that the order of the reaction responsible for the decrease of paramagnetic defects on annealing at temperatures T ann >1020 K or times no more than one hour is equal to 2, with the activation energy of the process being E a =1.07 eV.