Novel thin-film CuInSe{sub 2} fabrication. Annual subcontract report, 1 May 1992--31 October 1993

This report describes work exploring a new technique for the formation of Culn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films. The cu deposition was separated fro the Ga+In deposition such that precursor films with compositions of either Cu{sub x}Se or (In{sub x}Ga{sub 1{minus}x}){sub 2}Se{sub 3} were formed. These precursors were exposed to either (a) In+Ga+Se or (b) cu+Se at substrate temperatures > 500 C to form Galn{sub x}Ga{sub 1{minus}x}Se{sub 2}. Films made from the Cu{sub x}Se precursors were unexceptional, but films made from the (In{sub x}Ga{sub 1{minus}x}){sub 2}Se{sub 3} precursors were of exceptional smoothness and density. During the period covered in this report, a device made fro one of these films resulted in what, at the time, was the highest total-area efficiency measured for any non-single-crystal, thin-film solar cell, at 15.9%.