Bulk crystal growth and surface preparation of NiSb, MnSb, and NiMnSb

Bulk single crystal and polycrystalline samples of NiSb, MnSb, and NiMnSb have been grown and characterized. The lattice parameter of NiMnSb was found to be 5.945 ± 0.001 A, around 0.25% larger than previous reports. The surface preparation of these materials was investigated using x-ray photoelectron spectroscopy. Wet etching with HCl and argon ion sputtering were used in tandem with vacuum annealing. For both binary materials, a clean and stoichiometric surface could be regained by HCl etching and annealing alone. However, clean and stoichiometric ternary NiMnSb was not successfully prepared by these methods. The transition metal 2p and 3p levels are analyzed for all three materials.