A unified method to extract the effective mobility in InGaAs metal-insulator-semiconductor field-effect-transistors using scattering-parameters

Abstract In this letter, we propose a unified method to extract the effective mobility (μeff) of In0.52Al0.48As/In0.7Ga0.3As/In0.52Al0.48As single-quantum-well (SQW) metal-insulator-semiconductor field-effect-transistors (MISFETs). The proposed method relies only on the measured high-frequency scattering-parameters (S-parameters) of the MISFETs in the linear regime. Two key metrics of MOS devices, intrinsic output conductance (go_i) and intrinsic gate capacitance (Cg_i), were extracted directly from the measured S-parameters using two-port network parameter theories, allowing us to compute the effective mobility of the MOS devices. Since the method only requires the small-signal S-parameter measurement data, it would be applicable to any kind of FETs and could be fruitful for studying the dependence of the effective mobility on lateral electric field intensity.