Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases

Abstract We have demonstrated an ex situ method of cleaning reactor parts of metal organic chemical vapor deposition (MOCVD) equipment for nitride semiconductors. The etching rate of GaN by Cl 2 gas was sufficiently high compared with that of BCl 3 gas and HCl gas. The etching rates of GaN and Al 0.1 Ga 0.9 N with 5% Cl 2 at 750 °C were higher than 30 and 2 μm/h, respectively. We confirmed that there was no contamination of Fe, Ni, Cr and Cl in the GaN film by Cl 2 gas dry cleaning.