High power LPP EUV source system development status
2009
Extreme ultraviolet (EUV) technology has been recognized as the major lithography technology for 22 nm HP and
beyond to fulfill Moore's Law, which predicts that circuit dimensions shrink 70% every 2~3 years in order to achieve
cost down and obtain greater functionality per unit area. EUV source power is one of the key factors in determining the
cost-effectiveness of EUVL compared to other lithography technologies, like double patterning. Only when EUV
power can achieve a certain level, the cost of EUV lithography under high volume manufacturing (HVM) can become
much more competitive than that of double patterning techniques. In this paper, the performance of the first production
Cymer high power laser produced plasma (LPP) EUV source integrated with a 5 sr multi-layer mirror (MLM) collector
and fully integrated debris mitigation will be shown. The latest results on power generation, stable and efficient
collection, and clean transmission of EUV light through the intermediate focus will be presented. The lifetime of the
MLM collector is a critical parameter in the development of extreme ultraviolet LPP lithography sources. Debris
mitigation techniques are used to inhibit reflectivity degradation from deposition of target material, sputtering of the
multilayer coating, and implantation of incident particles, which can reduce the efficiency of the MLM collector during
exposure. The far field images of MLM collector are recorded by intermediate focus metrology with a CCD camera to
determine the reflectivity status of the MLM collector during exposure. The results of these debris mitigation techniques
are compared through multiple-hour EUV exposure. Testing shows cleanliness at the source-scanner interface acceptable
to the limit of detection.
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