Reliability on EUV Interconnect Technology for 7nm and beyond

In this research, we present the robust reliability performance of BEOL by utilizing EUV single patterning and further feasibility of EUV process for future nodes. As compared to ArF, EUV BEOL shows superior reliability performances such as significantly improved TDDB, breakdown voltage (Vbd), robust resistance shift with SM and TC tests and reliable package level characteristics. Long-term TDDB analysis follows an even more aggressive power law model rather than the root E model under low bias. Newly developed via array (quasi-power rail) EM structure has a great feasibility to enhance EM performance for future nodes.