On-axis single-target sputter deposition of YBCO on Si and YSZ

Abstract Thin films of YBa 2 Cu 3 O 7−δ were deposited by on-axis single-target magnetron sputtering from stoichiometric targets onto (100) silicon substrates with yttria-stabilized zirconia (YSZ) buffer layers and onto single-crystal (100) YSZ substrates. The films deposited on the silicon substrates are highly c -axis textured, while the films on single-crystal YSZ are epitaxial with both a − and c -axis orientation depending on the deposition conditions. High deposition rates of 2500 A h −1 for YSZ films and 3500 \ rA h − for superconducting films on silicon were achieved. With higher oxygen partial pressures and deposition temperatures, the deposition rate of the superconducting films on YSZ substrates was found to be about five times smaller. Superconducting films with T c (onset) ⪖ 90 K and transition width (90%−10%) ⩽ 8 K were obtained.