Method of manufacturing a conductive pattern and semiconductor device using the same

A method for manufacturing a conductive pattern and a semiconductor device are provided to obtain a stable structure by using an etch solution. A mold film(110) having an opening is formed on a substrate(100). A conductive pattern(120) is sequentially formed at a sidewall and a lower surface of the opening. A part of the mold film is removed to expose a part of the conductive pattern. A surface of the exposed conductive pattern is etched using an etching solution having ozone and hydrofluoric acid to reduce a thickness of the exposed conductive pattern. A buffer film(130) is formed to fill the opening. A conductive film is sequentially at an upper surface of the mold film, a sidewall and a lower surface of the opening. A CMP process is performed in the resultant structure exposing an upper surface of the mold film to form the conductive pattern.