Measurement of the effective wavelength of x-ray lithography sources

Abstract This paper describes techniques to determine the effective wavelength of x-ray lithography sources. The experimental results give information on the actual x-ray absorption of the resist materials for the x-ray source under test. Results for two beam lines of the HELIOS storage ring installed at the IBM Advanced Lithography Facility, and for one beam line at the VUV ring at the Brookhaven National Laboratory are presented, and compared to calculations.