Characterization of MOCVD-grown CdMnTe films by infrared spectroscopy
1989
Single crystal Cd1−x Mn x Te (x=0.10–0.30) films have been grown by metalorganic vapor deposition (MOCVD) on (111) GaAs substrates with and without CdTe buffer layers, at substrate temperatures of 380° to 450° C. Infrared phonon spectra reveal that the films grown at 420° C substrate temperature have reasonable Mn concentration (>10%) and are of good quality in agreement with Raman measurements. Spectral analysis also gives values for Mn concentration that agrees with photoluminescence measurements, and determines film thickness.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
3
Citations
NaN
KQI