Stacked CMOS Image Sensors using Direct Bonding of SOl Layers
2015
We report on three-dimensi onally (3D) integrated circuits and stacked CMOS image sensors by using the direct bonding of silicon-on-insul ator (SOl) layers. Since the developed process allows small embedded Au electrodes by damascene process, high-density integration is possible within an image sensor pixel area of a few micrometers, beyond the limit of the conventional technique such as through silicon vias (TSVs). We confirmed a successful operation of the developed 3D integrated circuits with NFETs and PFETs bonded from separate wafers. We also demonstrated stacked CMOS image sensor with pixel wise 3D integration, which indicates that our technology is promising for high-density integrated circuits and CMOS image sensors.
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