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Eiji Higurashi

University of Tokyo
National Institute of Advanced Industrial Science and Technology

256

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1826

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Direct bonding of GaN and Si substrates using wet cleaning processes

2021
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Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga2O3 film through atomically thin intermediate layer

2021
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Application of thin Au/Ti double-layered films as both low-temperature bonding layer and residual gas gettering material for MEMS encapsulation

2021 Microelectronic Engineering
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Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions

2021
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Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions

2021 Scripta Materialia
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Room-Temperature bonding of AlN ceramic and Si semiconductor substrates for improved thermal management

2021 ICEP | International Conference on Electronics Packaging
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Development of Au/Pt/Ti multilayers for wafer-level packaging and residual gas gettering

2021 ICEP | International Conference on Electronics Packaging
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Heterogeneous GaN-Si integration via plasma activation direct bonding

2021 Journal of Alloys and Compounds
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Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer

2021
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Surface smoothing of Au plated films by template stripping towards low-temperature bonding for 3D integration

2021
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