Photoluminescence study of the 1.3–1.55 eV defect band in CdTe

Abstract We report on the photoluminescence (PL) study of defect levels in bulk CdTe. The PL of CdTe was measured in the 1.3–1.55 eV spectral range and at temperatures from 9 to 300 K. The PL spectra were analyzed numerically and various parameters (peak positions, Huang–Rhys factors, etc.) determined. Numerical modeling of low-temperature spectra was performed, and it was shown that the defect band consists of three distinct transitions. Also, we performed hyper-spectral imaging of PL at 77 K and analyzed the spatial distribution of defects and calculated the level of spatial correlation between the defects.