Analytics of CVD Processes in the Deposition of SiC by Methyltrichlorosilane

Gaseous species of the thermal methyltrichlorosilane decomposition were determined qualitatively and quantitatively by in situ infrared spectroscopy and gas chromatography. Surface species like SiCl x were detected by reflexion in situ infrared spectroscopy. A CVD mechanism of this decomposition is introduced. The comparison between the layer composition determined by EPMA and determined by gas phase analysis is given.