Etching solution and etching

Etching solution (1), comprising, by weight of water nitric acid, hydrofluoric acid and sulfuric acid containing 15 to 40 weight percent nitric acid, 10-41 weight percent sulfuric acid and 0.8 to 2.0 weight percent hydrofluoric acid, use of this etching solution for the etching of silicon and etching method for silicon wafers.