Overcoming the challenges of 22-nm node patterning through litho-design co-optimization
2009
Historically, lithographic scaling was driven by both improvements in wavelength and numerical aperture. Recently,
the semiconductor industry completed the transition to 1.35NA immersion lithography. The industry
is now focusing on double patterning techniques (DPT) as a means to circumvent the limitations of Rayleigh
diffraction. Here, the IBM Alliance demonstrates the extendibility of several double patterning solutions that
enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through
innovative processes. This paper details a set of solutions that have enabled early 22 nm learning through careful
lithography-design optimization.
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