High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230 cm 2 /V-s. The shortest 40 nm gate length (L G ) transistors achieve peak transconductance (G m ) of 510 muS/mum and cut-off frequency (f T ) of 140 GHz at supply voltage of 0.5V. These represent the highest G m and fT ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.