High-Frequency Electrical Modeling and Characterization of Differential TSVs for 3-D Integration Applications

This letter makes a fast and efficient analysis of the scalable differential through-silicon via (TSV) configuration in 3-D integrated circuits. The equivalent-circuit model of a differential TSV pair is described. The critical differential characteristics are analyzed and calculated in terms of a lumped-circuit model and the effective loop parameters of multi-TSVs. The calculated results are validated by the 3-D full-wave field solver high frequency simulator structure (HFSS) over a wide frequency range.