Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

Abstract The degradation of industry-supplied GaN high electron mobility transistors (HEMTs) subjected to accelerated life testing (ALT) is directly related to increases in concentrations of two defects with trap energies of E C -0.57 and E C -0.75 eV. Pulsed I-V measurements and constant drain current deep level transient spectroscopy were employed to evaluate the quantitative impact of each trap. The trap concentration increases were only observed in devices that showed a 1 dB drop in output power and not the result of the ALT itself indicating that these traps and primarily the E C -0.57 eV trap are responsible for the output power degradation. Increases from the E C -0.57 eV level were responsible for 80% of the increased knee walkout while the E C -0.75 eV contributed only 20%. These traps are located in the drain access region, likely in the GaN buffer, and cause increased knee walkout after the application of drain voltage.