Drive method for semiconductor memory device

A method of driving a semiconductor memory device, the semiconductor memory device comprising: a ferroelectric capacitor 30, FET 10 are connected in series strong readout, FET20 are connected in parallel and selecting the ferroelectric capacitor 30 to ferroelectric capacitor 30. When reading out the data in the ferroelectric capacitor 30 is stored, the read lower than the coercive voltage of the ferroelectric capacitor 30 of the voltage applied to the upper electrode of the ferroelectric capacitor 30 of 31, when removing the read voltage, It enables the ferroelectric film 33 of the polarization misalignment to return read data before the deviation. Improved holding characteristics of the semiconductor memory device having a ferroelectric capacitor.