Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure

Abstract In this paper, a position-sensitive detector (PSD) with an enhanced position detection performance has been proposed using graphene-silicon-on-insulator (GSOI) structure. By introducing the gate manipulation, the separation efficiency and diffusion speed of the photo-induced charges have been greatly improved. We experimentally observe a 10-fold increase in the generated photocurrent and the response time is shorten by around 8 times, compared to the counterpart without modulation. High position sensitivity (518 μA/mm) to weak-light-sensing, long-distance-sensing (1.2 mm) and good linearity (nonlinearity