Synthesis specifics of Mg(Fe0.8Ga0.2)2O4 films on GaN

Mg(Fe0.8Ga0.2)2O4 films 340 nm thick were prepared by ion-beam sputtering on aluminasmoothed GaN substrates. Reactions that can occur between the components of heterostructure during its crystallization in the range 298.15–1273 K are analyzed. In order for Mg(Fe0.8Ga0.2)2O4 films to be continuous, their crystallization temperature should be lowered and alumina deposition—sputtering on GaN should be repeated several times.