The effect of substrate temperatures on the structural, optical and electrical properties of N–Al codoped ZnO thin films

Abstract N–Al codoped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. The films were deposited at different substrate temperatures ranging from 100 °C to 400 °C. The ZnO (002) peak showed the highest intensity at the substrate temperature of 400  ° C. The prepared films showed good transmission of above 72% in the visible range and the calculated values of energy band gaps were in the range (3.42±0.1–3.54±0.1 eV). Raman Peaks at 273.58 cm −1 and 579.49 cm −1 corresponding to ZnO:N and ZnO:AlN respectively were also observed. The Hall measurements showed that the films deposited at RT and 400 °C exhibit p-type conduction with hole concentrations of 1.52×10 +19  cm −3 and 6.3×10 +17  cm −3 respectively. The corresponding mobilities were 0.866 cm 2  V −1  s −1 and 10.5 cm 2  V −1  s −1 respectively.