Avalanche noise associated with gate current of Si JFET
1987
Measurements are reported on the noise behaviour of the gate current in n-channel JFETs. Various bias conditions have been used to investigate the initial stage of the avalanche effect. It is shown that the Ieq noise varies with Ig if the avalanche effect is located in the channel and with 14g in the case of ionisation due to a high field at the gate junction.
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