SiC x-ray lithography mask fabricated by electron cyclotron resonance plasma source coupled with divided microwaves

A newly developed electron cyclotron resonance plasma source coupled with divided microwaves was investigated for depositing SiC films as an x-ray mask membrane. Silicon carbide (SiC) films were deposited with high reliability and high repeatability using this source. The stress in SiC films has easily been controlled for a self-supported mask membrane by the addition of heat treatment. The SiC membrane has a very smooth surface (less than 1 nm of Rrms), and high stability against the x-ray irradiation, which enables highly accurate fine pattern replication with x-ray lithography.