Effects of Si Content on the Optical and Electrical Properties of SiO_x Films

Silicon-rich silicon oxide(SiOx,1x2)films were deposited by RF magnetron sputtering through adjusting the sputtering power on silicon(Si)target.After high temperature annealing,Si nanocrystals(Si-NCs)embedded in Si-oxide matrix were formed through phase separation.With the increase of Si content,the photoluminescence(PL)intensity of Si-NCs and the conductivity of MOS devices of the annealed SiOx films first increase and then decrease.Meanwhile,there is a red shift of PL peak.These phenomenons are due to,with the increase of Si content,the variation of the structure and distribution of SiNCs and the formation of"touching"Si-NCs.