Edge photodiode hybrided on Si motherboard for 2.5 Gb/s low cost photoreception

A low cost integration technology has been developed to assemble 2.5 and 10 Gb/s photodiodes. It relies on flip-chipped devices with lensed fibres positioned in V-grooves. For 2.5 Gb/s the photodiode, the fibre and the transimpedance amplifier are integrated on a single Si motherboard compatible with mounting in a mini-dil module. The sensitivity is -23.5 dBm at 10/sup -10/ BER with no error floor.