Cu/LKD-5109 damascene integration demonstration using FF-02 low-k spin-on hard-mask and embedded etch-stop

The feasibility of integrating low-k spin-on dielectrics into a Cu damascene structure using JSR's LKD-5109 (k = 2.2) has been investigated. The chemical vapor deposited embedded etch-stop (ES) and dual hard-mask (HM) are replaced by JSR's spin-on dielectrics (organic FF-02 and MSQ type LKD-2022). In this study, the capability of FF-02 as an ES and as a chemical mechanical polishing (CMP) stop has been verified. In addition to electrical and mechanical film properties of FF-02, the chemical compatibility and removal rate to CMP slurries are investigated. Finally, the first successful single damascene (SD) integration with spin-on dual HM and ES is demonstrated and its electrical results including Raphael's model simulation of the k-value are reported.