Synthesis method of cadmium telluride quantum dots and synthesis method of Type II cadmium telluride core-shell quantum dots

The invention discloses a synthesis method of cadmium telluride quantum dots and a synthesis method of Type II cadmium telluride core-shell quantum dots. The synthesis method of cadmium telluride quantum dots comprises the following steps: adding a cadmium source, a tellurium source, a ligand and an organic dielectric into a reaction kettle at room temperature, heating to 220 DEG C in a nitrogen or argon protective atmosphere to react for 5-20 minutes, heating to 230-245 DEG C, and keeping the temperature to react for 5-30 minutes to obtain the cadmium telluride quantum dots. The chemical structural formula of the Type II cadmium telluride core-shell quantum dot is CdTe/CdSe or CdTe/CdS, and the process of coating cadmium selenide or cadmium sulfide on the cadmium telluride quantum dots is performed by a phosphine-free in-situ heating process. The synthesized cadmium telluride quantum dots and Type II cadmium telluride core-shell quantum dots can emit 530-800nm; and in the 550-650nm wave band, the fluorescent quantum yield is greater than or equal to 40%, and the maximum yield can reach 75%.