RBS/ion implanter facility for in-situ ion-surface studies

Abstract An RBS/ion implanter facility for high-energy ion-surface interaction studies was constructed. The potential application of the facility was demonstrated by studying ion-stimulated processes in Ni films on an Al substrate at elevated temperatures and preferential sputtering of Ni4Mo single crystals. An unusual temperature behaviour for the radiation enhanced diffusion rate in the vicinity of the Curie point for Ni was seen. The sputtering of (001) and (111) faces of Ni4Mo single crystal with 20–80 keV inert gas ions was shown to enrich the surface in Mo, which is the same for both faces.