Electron beam lithography using inorganic resist at low acceleration voltage

In this paper, EBL at low acceleration voltage is possible to control of developed depth (3D patterning) and rapid fabrication process around 100 nm line widths. Furthermore, inorganic resist is effective for fine patterning, and this material is eco-friendly. The combination of these techniques realizes time-saving, low electrical consumption and eco-friendly process and powerful tool for mask patterning and 3D nanoimprint mold fabrication.