InP heterojunction bipolar transistor circuit based on diode compensation

The present invention discloses an InP heterojunction bipolar transistor circuit based on diode compensation. The InP heterojunction bipolar transistor circuit comprises a power unit module (1) and a current compensation module (2). The current compensation module is connected to an input end of the power unit module, so as to control an input current of the power unit module; the power unit module consists of a first Indium Phosphide heterojunction bipolar transistor Q1, and current compensation module consists of a second Indium Phosphide heterojunction bipolar transistor Q2 and a resistance R; and a collector of Q2 is short-connected to a base and, as a diode, connected to a base of Q1, and the resistance R is used as a control switch and connected between an emitter of Q2 and the ground. According to the InP heterojunction bipolar transistor circuit based on diode compensaiton, which is disclosed by the present invention, the self-heating effect of the InP heterojunction bipolar transistor is compensated at the cost of quite a few chip area according to a negative feedback compensation principle, so that direct current operating points are stabilized, linearity of transistor outputting is improved, and the circuit can be used for guiding direct current bias design of radio-frequency and microwave circuits.