Enhanced photoresponsivity of the MoS 2 -GaN heterojunction diode via the piezo-phototronic effect

A device that combines the advantages of both conventional and modern atom-thick semiconductors has been created. Two-dimensional materials have a wide range of exotic electronic properties that could lead to new generation of electronic devices. However, achieving the broadest diversity of functionality will probably necessitate combing these flat materials with conventional semiconductors. Zhong Lin Wang from the Beijing Institute of Nanoenergy and Nanosystems and colleagues created a photodetector whose response can be tuned by applying pressure. They stacked two-dimensional molybdenum disulfide onto a thin film of gallium nitride to create a diode that generates an electrical signal on exposure to light with a wavelength of 365 nanometers. The team showed that the photoresponsivity could be boosted by a factor of 3.5 when an external pressure was applied.