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Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films
Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films
2009
Chihiro Tamura
Tomohiro Hayashi
Yuuki Kikuchi
Kenji Ohmori
Ryu Hasunuma
Kikuo Yamabe
Keywords:
Nuclear magnetic resonance
Threshold voltage
Materials science
temperature stress
negative bias
Condensed matter physics
Correction
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