3-Dimensional Morphology of GaP-GaAs nanowires

Semiconductor nanowires are promising candidates for enabling integration of new functionalities. based on the advantageous properties of III–V semiconductors, such as high carrier mobility and optical activity into existing silicon technology. Because of the small dimensions and the consequently large ratio of surface to bulk atoms, the nanowire surface morphology and resulting chemistry can considerably affect the nanowire (opto-) electronic properties, such as carrier mobility and luminescence quantum yield. An elegant way to suppress such surface related effects is to cap the wires with a wide bandgap material to form core/shell nanowire structures. So far, only the vapour-liquid-solid (VLS), i.e. the axial growth mechanism and the zinc blende crystal structure has been considered in relation to the of III–V nanowire side faceting. In order to design and optimise nanowire properties for optical, electrical or mechanical performance, it is essential to take control over the nanowire surface morphology by fully understanding the parameters affecting radial growth.